Random Telegraph Noise Modeling for Circuit Analysis: RTN in Ring Oscillators

In highly scaled MOSFETs, random telegraph noise (RTN) can decrease the reliability and yield of circuits. RTN is produced by charge trapping, which in large devices results $1/f$ noise. We derived analytical formulations for modeling impact delay inverters jitter ring oscillators. show that parameters interest when characterizing circuit analysis are distribution current deviations density traps space area, energy log-space time-constants. The model gives a direct relation between variance oscillators (or inverters) power spectral RTN, includes be written using time- or frequency-domain parameters.